Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 2: III-V Halbleiter
HL 2.10: Vortrag
Montag, 24. März 2003, 12:45–13:00, BEY/118
Temperature dependence of the electron Landé g factor in (110) GaAs quantum wells — •Stefanie Döhrmann1, Jörg Rudolph1, Dieter Schuh2, Werner Wegscheider3, Daniel Hägele1, and Michael Oestreich1 — 1Universität Hannover, Institut für Festkörperphysik, Abteilung Nanostrukturen, Appelstr. 2, 30167 Hannover — 2Technische Universität München, Walter-Schottky-Institut — 3Universität Regensburg, Institut für Angewandte und Experimentelle Physik
The electron Landé g factor is a good test parameter for band structure calculations. We determine the temperature dependence of the g factor in (110) oriented GaAs quantum wells by means of spin quantum beat spectroscopy over a temperature range from 6 K to 300 K. Long spin dephasing times permit precise measurements.
The MBE-grown sample contains 20 nm thick n-doped QWs with an electron density of about 1,1·1011cm−2. The sample is mounted in Voigt-configuration in a magnet cryostat. Spin quantum beats are observed by time-resolved photoluminescence, using ps-pulses from a Ti:Sapphire laser for low power excitation and a synchroscan streak camera for detection.
The electron g factor is found to increase linearly from −0.35 at 6 K to −0.24 at 300 K, showing a similar behavior as values measured in bulk GaAs which differ strongly from five-band k·p calculations.