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HL: Halbleiterphysik

HL 2: III-V Halbleiter

HL 2.13: Talk

Monday, March 24, 2003, 13:30–13:45, BEY/118

Structural properties of (In)GaAsN — •Lutz Görgens, Peter Neumaier, Andreas Bergmaier, Günther Dollinger, and Reiner Krücken — Physik-Department E12, Technische Universität München, James-Franck-Straße, D-85748 Garching

We report on the structural properties and thermal stability of (In)GaAsN single layers and multiple quantum wells grown on GaAs. The structures have been investigated using high-resolution elastic recoil detection (ERD) and channeling-ERD.

The samples were measrured prior to and after annealing at 750^∘ C. Changes of In, N and impurity distributions were measured with an accuracy of 1 nm. The lattice-site distribution of N in (In)GaAsN and its change with annealing was investigated.