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Dresden 2003 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 27: Spinabh
ängiger Transport I

HL 27.6: Vortrag

Dienstag, 25. März 2003, 18:30–18:45, BEY/154

All-optical injection of spin currents in semiconductors — •Jens Hübner1, W. W. Rühle1, R. D. R. Bhat2, J. E. Sipe2, H. M. van Driel2, M. Klude3, and D. Hommel31Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg — 2Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario, Canada M5S 1A7 — 3Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

Quantum interference of one- and two photon absorption can, under suitable polarization and phase conditions, lead to the injection of ballistic, spin-polarized currents [1]. Here we present the first experimental results which directly gives the evidence for the spin-polarization of these injected currents. The spin-polarization of the optically injected currents perpendicular to the excitation direction is detected by measuring a phase-dependent spatial shift of the circularly polarized photoluminescence in cubic ZnSe for the case that the one- and two-photon light fields of femtosecond laser pulses are cross linear polarized. The current directions as well as the carrier’s spin orientations can be directly controlled via the relative phase and polarization of the exciting two-color light fields.

[1] R.D.R. Bhat and J.E. Sipe, Phys. Rev. Lett. 85, 5432 (2000)

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