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HL: Halbleiterphysik

HL 34: Transporteigenschaften

HL 34.6: Vortrag

Mittwoch, 26. März 2003, 18:00–18:15, POT/81

Sensitivity and noise in doped-channel Al0.3Ga0.7As/InyGa1−yAs quantum-well micro-Hall devices operated at high electric fields — •Vas. P. Kunets*1, J. Dobbert1, W. Hoerstel1, H. Kostial2, H. Kissel3, U. Müller1, G. G. Tarasov1, Yu. I. Mazur4, and W. T. Masselink11Institut für Physik, Humboldt-Universität zu Berlin, Berlin — 2Paul-Drude-Institut für Festkörperelektronik, Berlin — 3Ferdinand-Braun-Institut für Höchstfrequenztechnik, Berlin — 4Department of Physics, University of Arkansas, Fayetteville, USA

Pseudomorphically strained InGaAs doped-channel quantum-well (QW) micro-Hall devices are characterized in terms of linearity, sensitivity, and noise at high electric fields. Even at electric fields higher than 1.8 kV·cm−1, excellent linearity is observed. Magnetic sensitivities up to 1500 V·A−1·T−1 and signal-to-noise sensitivities (SNS) up to 114 dB·T−1 at 1 kHz and 300 K are measured; because the performance in these structures is driven in part by electron velocity, the performance does not degrade even at high electric fields up to 2.4 kV·cm−1 and corresponds to a lowest detection limit of 127 nT·Hz−1/2. The strained Si-δ-doped InGaAs channels exhibit a lower voltage noise spectral density compared to uniformly doped GaAs channels. Because of the high doping, an excellent temperature stability of 80 ppm·K−1 is observed in the temperature range of 77 to 300 K. Thus, doped-channel pseudomorphically strained InGaAs QW high-velocity devices have several advantages over modulation-doped high-mobility structures at high electric fields.

*Corresponding author. E-mail address: kunets@physik.hu-berlin.de

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DPG-Physik > DPG-Verhandlungen > 2003 > Dresden