Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 39: Ultrakurzzeitph
änomene I
HL 39.3: Vortrag
Donnerstag, 27. März 2003, 11:30–11:45, BEY/81
Determining the carrier-envelope offset frequency of few-cycle pulses in ZnO — •T. Tritschler1, O. D. Mücke1, M. Wegener1, U. Morgner2, and F. X. Kärtner3 — 1Institut für Angewandte Physik, Wolfgang-Gaede-Str. 1, Universität Karlsruhe, 76131 Karlsruhe — 2Institut für Hochfrequenztechnik und Quantenelektronik, Engesserstr. 5, Universität Karlsruhe, 76131 Karlsruhe — 3Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, MIT, Cambridge, MA 02139, U.S.A.
The carrier-envelope offset (CEO) phase, φ, is the phase between the rapidly oscillating carrier wave and the electric field envelope of a pulse. Recently several approaches to measuring the CEO frequency fφ were reported. In these experiments, the interference of the fundamental, broadened by self-phase modulation, with the second harmonic, generated in an independent medium, leads to a beat note at frequency fφ in the radio frequency spectra. Apart from being quite complex, such setups have the inherent drawback that the CEO phase changes within the setup. However, with 5 fs pulses directly from a mode-locked laser oscillator, focused to a micron size spot onto ZnO, one soon enters the largely unexplored regime of extreme nonlinear optics in semiconductors, permitting a simplified measurement of the frequency fφ [1]. Furthermore, ZnO allows for using thin samples with negligible group delay dispersion – a prerequisite for measuring the CEO phase itself. Here, we focus on the description of recent experiments on 350 nm thin epitaxial films of ZnO. A detailed comparison between experiment and theory is given.
[1] O. D. Mücke et al., Opt. Lett. 27, 2127 (2002)