Dresden 2003 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 40: Grenz- und Oberfl

HL 40.1: Vortrag

Donnerstag, 27. März 2003, 11:00–11:15, BEY/154

Interface Characterization of the High-k Gate Dielectric Pr2O3 — •Hans-Joachim Müssig1, Jarek Dabrowski1, and Dieter Schmeisser21IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany — 2BTU, Angewandte Physik-Sensorik, Postfach 101344, D-03013 Cottbus, Germany

Pr2O3 is currently under consideration as a potential alternative gate dielectric candidate for sub-0.1 µm Complementary Metal Oxide Semiconductor (CMOS) technology. For all thin gate dielectrics, the interface with silicon plays a key role, and in most cases is a dominant factor in determining overall electrical properties. We studied the Pr2O3/Si(001) interface by a non-destructive depth profiling using synchrotron radiation photo-electron spectroscopy and ab initio calculations. Our results provide evidence that a chemical reactive interface exists consisting of a mixed Si-Pr oxide such as (Pr2O3)x(SiO2)1−x, typically in non-stoichiometric composition. There is no formation of neither an interfacial SiO2 nor interfacial silicide: all Si-Pr bonds are oxidized and all SiO4 units dissolve in the Pr oxide. Interfacial silicates like (Pr2O3)x(SiO2)1−x are promising high-k dielectric materials because they represent incremental modification of SiO2 films by Pr ions so that the interface characteristics can be similar to Si-SiO2 interface properties. Under ultrahigh vacuum conditions, silicide formation is observed when the silicate film is heated above 800C. The praseodymium silicate system observed at the interface between Si(001) and Pr2O3 offers greater flexibility towards integration of Pr2O3 into future CMOS technologies.

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