Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 44: Quantenpunkte und -dr
ähte: Optische Eigenschaften III
HL 44.2: Vortrag
Donnerstag, 27. März 2003, 14:45–15:00, BEY/118
Wavelength Selective Data Storage in InGaAs-GaAs Quantum Dots — •Yann Ducommun1, Miro Kroutvar1, Artur Zrenner2, Jonathan Finley1, Max Bichler1, and Gerhard Abstreiter1 — 1Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany — 2Universität Paderborn, FB6, Warburger Str. 100, 33098 Paderborn, Germany
The fully quantized electronic structure of self-assembled quantum dots (QDs) combined with their inhomogeneously broadened absorption characteristics has led to a number of proposals for their use in novel information storage devices utilizing both spatial and wavelength domains. In this contribution, we present the first demonstration of wavelength selective charge storage (electrons or holes) in InGaAs self-assembled QDs with direct optical read-out of the stored information in the spectral domain. Our results demonstrate unambiguously wavelength selective charging with long (much more than 25 µs) resonant data storage lifetimes and enable us to probe directly carrier excitation processes and potentially electron spin dynamics in sub-ensembles of semiconductor QDs.