Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 49: Poster II
HL 49.83: Poster
Donnerstag, 27. März 2003, 16:30–19:00, HSZ/P2
Polarisation-sensitive detectors and switches based on ordered InGaAsP — •S. Krämer1, J. Spieler1, R. Blache1, S. Neumann2, W. Prost2, P. Kiesel3, F. J. Tegude2, and G.H. Döhler1 — 1Institut für Technische Physik, Universität Erlangen-Nürnberg — 2Institut für Halbleitertechnik, Universität-Gesamthochschule Duisburg — 3Palo Alto Research Center Inc., Palo Alto, USA
In the semiconductor InGaAsP grown by MOVPE under special growth conditions, a monolayer superlattice arrangement is formed in [111]B-direction. Such naturally grown superlattices have been observed in ternary alloys, for example in InGaAs or GaInP. In InGaAsP the ordering induced effects (polarization anisotropy of the absorption) are more pronounced as in the ternary materials. Encouraging is the tunability of the bandgap in InGaAsP keeping the lattice matching to the substrate (InP) unchanged. The importance for the optical communication wavelengths at 1.3 µm and 1.5 µm is obvious.
The principle of polarization sensitive detection and switching has already been shown [1]. We use the design of two stacked n-i-p-diodes. The top diode works as a pin-FET with an ordered InGaAsP intrinsic layer. The bottom diode contains lower bandgap material in the i-region and works as reference diode. So the n-channel conductance of the FET-diode is highly dependent on the polarization of the incoming light. Appropriate designs allow polarization sensitive switching and sensitive polarization detection. We report on recent results obtained with ordered quaternary InGaAsP diodes in comparison with ternary materials.
[1] J. Spieler et al. .....