Dresden 2003 – wissenschaftliches Programm

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O: Oberflächenphysik

O 12: Postersitzung (Struktur und Dynamik reiner Oberfl
ächen, Grenzfl
äche fest-flüssig, Nanostrukturen, Teilchen und Cluster, Halbleiteroberfl
ächen und Grenzfl
ächen, Zeitaufgelöste Spektroskopie, Rastersondentechniken, Methodisches)

O 12.34: Poster

Montag, 24. März 2003, 18:00–21:00, P1

Investigation of the SiO2/Si(100) interface by angle-scanned photoelectron diffraction — •Stefan Dreiner1, Mark Schürmann1, Martin Krause1, Carsten Westphal1, and H e21Universität Dortmund, Experimentelle Physik I, 44221 Dortmund, Germany — 2Universität Münster, Physikalisches Institut, 48149 Münster, Germany

The interface between silicon oxide and silicon plays a crucial role in modern semiconductor technology. Due to the advancing miniaturisation of semiconductor devices the atomic structure at the interface becomes increasingly important.
Ultrathin SiO2 films were thermally grown on Si(100). Photoelectron diffraction measurements of the silicon 2p core-level were performed to investigate the interface structure of the various oxidation states of silicon. The Si2p-spectra were recorded with a photon energy of 180 eV at the U-41-PGM beamline at BESSY II. The photoemission data show the Si 2p bulk signal and six shifted components.
In the present work we combine the chemical state specificity of high-resolution photoemission with the structure sensitivity of photoelectron diffraction. Structural information is obtained by a comparison of the experimental photoelectron diffraction patterns with simulated multiple-scattering calculations for model clusters. We present experimental 2π photoelectron diffraction patterns for the various chemically shifted states of Si. A bridge-bonded interface structure which was found by theoretical investigations [1] allows us to explain main features of the experimental patterns.

[1] Yuhai Tu and J. Tersoff, Phys. Rev. Lett. 84, 4393 (2000)

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