Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 22: Epitaxie und Wachstum I
O 22.14: Vortrag
Dienstag, 25. März 2003, 18:15–18:30, FOE/ORG
Characterisation of radiation induced 3D growth of Ge on Si(111)-7x7 — •Selvi Gopalakrishnan1, H. Rauscher1, M. Haupt2, K. Thonke2, R.J. Behm1, and R. Sauer2 — 1Abt. Oberflächenchemie und Katalyse, Universität Ulm, 89069 Ulm — 2Abt. Halbleiterphysik, Universität Ulm, 89069 Ulm
Previous studies have shown that radiation induced Cs/Ci defects promote 3D growth of Ge islands grown by CVD on Si(111)-7x7. This hypothesis was tested by investigating samples with minimised carbon trace impurities. Ge deposition at 750 K after X-Ray irradiation and, for comparison after irradiation and subsequent annealing at 1000 K, which is known to quench these defects, leads to 3D structures in both cases. These structures were characterised by STM, AFM and TEM. Comparative measurements on non-irradiated samples confirm previous results which showed very slow growth after completion of the first two bilayers. Photoluminescence measurements show proof that in both cases no Cs/Ci defects are present, indicating that the Ge 3D growth could also be promoted by an alternate growth mechanism.