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O: Oberflächenphysik

O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)

O 24.12: Poster

Mittwoch, 26. März 2003, 14:30–17:30, P1

Surfactant Enhanced Annealing of Si Films on CaF₂/Si(111) — •E. Rugeramigabo¹, C. Deiter¹, J. Wollschläger¹, A. Kroeck¹, B.H. Müller², C.R. Wang² und K.R. Hofmann² — ¹Institut für Festkörperphysik, Universität Hannover, D-30167 Hannover — ²Institut für Halbleiterbauelemente und Werkstoffe, Universität Hannover, D-30167 Hannover

Semiconductor insulator multilayers with few nanometer thick films offer the opportunity to fabricate nanoelectronic devices with very interesting features. For instance, resonant tunneling diodes can be produced if a semiconductor quantum well by two insulating films which serve as tunneling barriers. W have investigated Si/CaF₂/Si(111) structures by means of GIXRD and AFM. Si films (thickness 10nm) are deposited on CaF₂ films (thickness 4nm) at room temperature and were annealed at T_a between 500^∘C and 650^∘C with and whithout deposition of additional Sb. The amorphous Si films recrystallize for T_a > 550^∘C. However, they are textured under these annealing conditiones as concluded from CTR measurements.