Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)
O 24.12: Poster
Mittwoch, 26. März 2003, 14:30–17:30, P1
Surfactant Enhanced Annealing of Si Films on CaF2/Si(111) — •E. Rugeramigabo1, C. Deiter1, J. Wollschläger1, A. Kroeck1, B.H. Müller2, C.R. Wang2 und K.R. Hofmann2 — 1Institut für Festkörperphysik, Universität Hannover, D-30167 Hannover — 2Institut für Halbleiterbauelemente und Werkstoffe, Universität Hannover, D-30167 Hannover
Semiconductor insulator multilayers with few nanometer thick films offer the opportunity to fabricate nanoelectronic devices with very interesting features. For instance, resonant tunneling diodes can be produced if a semiconductor quantum well by two insulating films which serve as tunneling barriers. W have investigated Si/CaF2/Si(111) structures by means of GIXRD and AFM. Si films (thickness 10nm) are deposited on CaF2 films (thickness 4nm) at room temperature and were annealed at Ta between 500∘C and 650∘C with and whithout deposition of additional Sb. The amorphous Si films recrystallize for Ta > 550∘C. However, they are textured under these annealing conditiones as concluded from CTR measurements.