Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)
O 24.22: Poster
Mittwoch, 26. März 2003, 14:30–17:30, P1
Initial stages of growth of epitaxial ZrO2 films on Pt(111) — •K. Meinel, K.-M. Schindler, and H. Neddermeyer — Martin-Luther-Universität Halle-Wittenberg, FB Physik, D-06099 Halle
Thin ZrO2 insulator films were deposited on Pt(111) and studied by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). The films were prepared by Zr evaporation in an O2 atmosphere (10−6 mbar) followed by post-annealing also in O2 atmosphere. Continuous ZrO2(111) films of high quality with smooth surfaces and high structural order are obtained for film thicknesses > 3 monolayers (ML) and temperatures of deposition and post-annealing of 470 K and 950 K, respectively. Already after deposition, the films display a clear p(1x1) LEED pattern of fcc (C1) ZrO2(111) even in the submonolayer range. However, the formation of an insulator gap is evidenced by STM only for mean film thickness > 2 ML where a characteristic contrast reversal is locally observed in dependence on the tunneling voltage. Due to a carpet-like mode of growth, no out of phase boundaries are formed at substrate steps.