Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)
O 24.63: Poster
Mittwoch, 26. März 2003, 14:30–17:30, P1
Epitaxial growth of Ag on W(110) — •E. Bertel1, C. Deisl1, M. Bürgener2, G. Meister2, and A. Goldmann2 — 1Institut für Physikalische Chemie, Universität Innsbruck — 2Experimentalphysik II, Universität Kassel
Epitaxial growth of Ag on W(110) at room temperature was studied by scanning tunneling microscopy. The first two Ag layers exhibit layer-by-layer growth. The first Ag monolayer is rotated and distorted with respect to the substrate, which yields a coincidence structure with an average periodicity of 40 Å. Two different domains are observed. This is in good agreement with previous studies [1,2]. The Moire pattern, however, is not perfectly regular. The deviations from the perfect periodicity indicate, in addition to local defects, a certain variability of the unit cell within the Ag monolayer. At saturation, the heavily strained layer exhibits a characteristic distribution of voids which are presumably due to elastic relaxation. After completion of the second layer, three-dimensional growth is observed.
[1] Y. Yang et al., Surf. Sci. 276, 341 (1992).
[2] E. Bauer et al., J. Appl. Phys. 48, 3773 (1977).