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Dresden 2003 – wissenschaftliches Programm

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O: Oberflächenphysik

O 24: Postersitzung (Epitaxie und Wachstum, Oxide und Isolatoren, Elektronische Struktur, Oberfl
ächenreaktionen, Adsorption an Oberfl
ächen, Organische Dünnschichten)

O 24.67: Poster

Mittwoch, 26. März 2003, 14:30–17:30, P1

Electronic structure of Pb films on Cu(111) — •JeongWon Kim1, Shubha Gokhale1,2 und Karsten Horn11Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin — 2Indira Gandhi National Open University, New Delhi, India

Quantum well states in thin metal films, arising from one-dimensional confinement of the conduction electrons, may have a profound influence on their physical properties, such as in the oscillatory coupling of magnetic layers across a nonmetallic spacer layer. Quantum well states may induce preferred magic heights in thin film growth, through a variation of the total electronic energy as a function of thickness, and this has been observed e.g. in the Pb/Si(111)[1], Ag/Fe(100)[2], and Pb/Cu(111)[3] systems. We have studied the electronic structure of Pb layers on Cu(111) grown under different conditions, using angle-resolved photoelectron spectroscopy. Our results for Pb films deposited at 100 K show a series of well-resolved peaks in the s-p-derived valence band near EF, theenergy and intensity of which evolve in a complex manner with Pb deposition. These data are analysed in terms of the phase accumulation model shown to account for quantum well states in a large number of systems.

[1] V.Yeh, L.Berbil-Bautista, C.Z.Wang, K.M.Ho, M.C.Tringides, Phys.Rev.Lett. 85, 5158(2000).

[2] D.Luh, T.Miller, J.J.Paggel, Y.Chou, T.-C.Chiang, Science 292, 1131(2001).

[3] R.Otero, A.L.Vazquez de Parga, R.Miranda, Phys.Rev. B 66,115401(2002).

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