Dresden 2003 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
O: Oberflächenphysik
O 32: Epitaxie und Wachstum II
O 32.7: Vortrag
Donnerstag, 27. März 2003, 16:30–16:45, FOE/ANOR
C60 growth on InP(100) — •J. A. Schaefer, G. Cherkashinin, S. Döring, M. Eremtchenko, G. Hartung, D. Malsch, A. Opitz, and T. Stolz — Institut für Physik and Zentrum für Mikro- und Nanotechnologien, TU Ilmenau, PF 100565, D-98684 Ilmenau
The growth of C60 on InP(100) was studied by different surface analytical techniques (UPS, XPS, LEED, EELS, HREELS, STM, AFM). From the beginning C60 grows in the Stranski-Krastanov mode in a hexagonal structure up to several monolayers, as shown by STM data.
In UPS the surface component of the In 4d signal increases with increasing C60 deposition relative to the In bulk intensity of InP. The influence of the thermally induced metallic In cluster size and concentration upon C60 growth will be discussed in detail together with corresponding changes in vibrational, electronic and friction data for different temperatures (100 K, 300 K) as a function of coverage.