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O: Oberflächenphysik
O 33: Nanostrukturen II
O 33.11: Talk
Thursday, March 27, 2003, 17:30–17:45, FOE/ORG
Stepped epitaxial graphite by transformation of vicinal SiC(0001) — •A. Varykhalov1, A. M. Shikin1,2, O. Rader1, W. Gudat1, A. Loza2, M. Poigine2, V. K. Adamchuk2, and D. Vyalikh3 — 1BESSY Berlin — 2St. Petersburg State University — 3FU Berlin
A novel method of producing stepped graphite surfaces by thermal treatment of a stepped SiC crystal is presented. Surface composition of flat and vicinal (3.5 degree miscut in [11-20]-direction) 6H-SiC(0001) is monitored by C1s and Si2p core-level and valence-band photoemission during stepwise annealing up to 1650 K resulting in a completely graphitized surface. Low-energy electron diffraction proves that this surface has saved its initial stepped character and in-plane orientation. We measured the first band dispersion of graphite on SiC and showed that it is very similar to natural graphite.