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O: Oberflächenphysik
O 33: Nanostrukturen II
O 33.2: Vortrag
Donnerstag, 27. März 2003, 15:15–15:30, FOE/ORG
Electron beam lithography in ultra-high vacuum for epitaxial metal nanowires on silicon — •T. Block, A.A. Shklyaev, V. Zielasek, and H. Pfnür — Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, D-30167 Hannover
Deposition of Ag on Si(001) and Si(111) surfaces at temperatures below 130 K followed by annealing can yield atomically smooth epitaxial metal layers with grain sizes up to 20 nm. Combining such methods with novel nanolithography techniques in UHV opens the perspective of creating 2D metal nanostructures of high crystallinity but arbitrary shape on silicon substrates. Using electron beam-stimulated oxygen desorption followed by selective thermal decomposition of the oxide [1], we have created line-shaped windows in ultrathin (0.3 nm) SiO2 films on Si(001) and Si(111) substrates. So far we have demonstrated windows with line widths down to 20 nm, exhibiting the surface reconstructions of clean Si(001) and (111), resp. Our experiments are performed in a combined SEM-STM system, rendering possible lithography and surface observation at sample temperatures in the range 80 - 900 K. First results concerning the structure of Ag deposits on patterned SiO2/Si surfaces will be presented.
[1] M. Ichikawa, J.Phys.: Condens. Matter 11 (1999) 9861.