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O: Oberflächenphysik
O 33: Nanostrukturen II
O 33.9: Vortrag
Donnerstag, 27. März 2003, 17:00–17:15, FOE/ORG
Chemical Bottom-up Fabrication of Nanoelectronic Components by No-dqConstructive NanolithographyNo-dq — •Stephanie Hoeppener, Rivka Maoz, and Jacob Sagiv — Dept. of Materials and Interfaces, Weizmann Institute of Science, 76100 Rehovot, Israel
Novel nanomaterials offer promising tools for further device miniaturization. One of the major problems - which arises especially in the planned fabrication of nanoelectronic devices - is the site-selective deposition and stabilization of these materials. For this purpose, chemically active, nanosized scaffolds with arbitrary shape are highly desired which might be useful templates to assemble whole functional nanodevices. With No-dqConstructive NanolithographyNo-dq a novel bottom-up nanofabrication method was introduced to inscribe chemical information into a highly ordered self-asssembly monolayer of octadecyltrichlorosilane (OTS) with a conductive AFM tip. The local electrochemical oxidation of the surface terminated −CH3 groups of the OTS layer to −COOH functions creates surface patterns in the 10−50 nm regime which can be subsequently used to perform selectively chemical reactions to grow metal or semiconductor nanoparticles, multilayers of organochlorosilanes etc. Combining different of these methods, an entire range of novel chemical strategies becomes available to fabricate nanosize basic building blocks of nanoelectronic circuits by chemical means such as conductive nanowires, nanogaps, etc.