Dresden 2003 – wissenschaftliches Programm
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O: Oberflächenphysik
O 37: Rastersondentechniken III
O 37.5: Vortrag
Freitag, 28. März 2003, 12:15–12:30, HSZ/02
Conductivity measurements with a double cantilever device — •A.-D. Müller1, F. Müller1, J. Mehner2, Th. Gessner3, and M. Hietschold1 — 1Chemnitz University of Technology, Institute of Physics, D-09107 Chemnitz — 2Chemnitz University of Technology, Department for Microsystem and Device Technology, D-09107 Chemnitz — 3Chemnitz University of Technology, Department for Microtechnology, D-09107 Chemnitz
Multiple cantilever devices offer a number of new special opportunities in fundamental surface science. Here, the design and functionality of a special double cantilever device is presented, whose two tips have a fixed lateral distance of 12 micrometer to each other but are independently controllable in vertical direction. The metallic coated tips have separate contacts. The two cantilevers are operated dynamically to obtain simultaneously two independent signals.
With these devices, conductivity measurements have been performed on several hydrogen passivated silicon surfaces. The results are discussed carefully considering the special tip sample geometry and the properties of a metal semiconductor contact.