Regensburg 2004 – wissenschaftliches Programm
DS 9.4: Vortrag
Montag, 8. März 2004, 16:00–16:15, HS 32
Investigations of Pr2O3 growth modes on 4H-SiC(0001) Surfaces — •Andriy Goryachko1, Guido Beuckert1, Peter Zaumseil2, Guenter Wagner3, and Dieter Schmeisser1 — 1Department for Applied Physics / Sensorics, BTU Cottbus, Universitaetsplatz 3-4, D-03046 Cottbus, Germany — 2IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany — 3IKZ, Max Born Str. 2, D-12489 Berlin, Germany
The SiC is suited especially well for high power and high voltage semiconductor devices. In order to increase the reliability against electrical breakdown of metal-insulator-semiconductor (MIS) structures, one needs to use the insulator with possibly higher dielectric constant. Pr2O3 is shown to posses a much higher dielectric constant (equals 30) than traditionally used SiO2. Therefore, Pr2O3/SiC is an excellent material combination for high voltage MIS devices. The 4H-SiC(0001) substrates are characterised with scanning tunneling microscopy, while the Pr2O3 surface - with atomic force microscopy technique. We show distinct growth modes of Pr2O3 film, such as 3D and layer by layer growth. The crystalline structure and film thickness are determined by X-ray diffraction and its chemical composition by X-ray photoelectron spectroscopy. The Pr2O3 film characteristics are optimised for high-quality MIS structures in terms of lateral uniformity, low interface states density and leakage current, as well as physical integrity.