Regensburg 2004 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 9: Dünnschichtanalytik II
DS 9.6: Vortrag
Montag, 8. März 2004, 16:30–16:45, HS 32
Examination of diamond seed-layers on Ir/ SrTiO3 using Scanning Electron Microscopy and Auger Electron Spectroscopy — •P Bernhard1, Ch. Ziethen1, M. Schreck2, S. Gsell2, H. Karl2, G. Schaefer3 und S. Schoenhense1 — 1University of Mainz, D-55099 Mainz — 2University of Augsburg, D-86135 Augsburg — 3OMICRON Nanotechnology GmbH, D-65232 Taunusstein
The growth of diamond films of macroscopic dimensions without grain boundaries (quasi single crystalline) is greatly influenced by the characteristics of the diamond seed-layers. These diamond seed-layers grown on top of an Ir/ SrTiO3 sample using a BEN (Bias Enhanced Nucleation) process [1] have been analysed using a UHV SEM and a small spot AES based on a Gemini column.
A peculiarity of this nucleation process is the accumulation of the diamond nuclei in clear bounded domains with negligible nucleation outside. In this work we focussed our interest on the determination of the carbon-layer thickness inside and outside the domains by measuring the attenuation of the iridium Auger lines. For the calculation the Auger electron inelastic mean free path in diamond was used.
After Focused Ion Beam structuring of the sample we also determined the layer thickness of a carbon precursor [2], using the same technique of SEM/ AES and we examined the contribution of subplantation to the growth of the diamond layer.
References [1] M. Schreck et al., Apl. Phys. Lett. 78 (2001) 192 [2] Th. Bauer et al., Diamond and Rel. Mat., 11 (2002) 493