Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 44: Poster II
HL 44.25: Poster
Donnerstag, 11. März 2004, 16:30–19:00, Poster A
Fabrication of Resonant-Tunneling Diodes by B Surfactant Modified Growth of Si Films on CaF2/Si — •C.R. Wang, M. Bierkandt, B.H. Müller, S. Paprotta, E. Bugiel, T. Wietler, and K.R. Hofmann — Institute for Semiconductor Devices and Electronic Materials, University of Hannover, Appelstr. 11A, 30167 Hannover, Germany
Boron (B) surfactant enhanced solid phase epitaxy (SPE) of thin Si films on CaF2/Si(111) substrates has been studied. Room temperature deposition of amorphous Si films followed by the deposition of one monolayer B atoms resulted in continuous and smooth epitaxial Si layers on CaF2 with a sharp B-induced √3x√3R30∘ surface reconstruction after annealing to about 635∘C. This growth technique was used to fabricate CaF2/Si/CaF2 double-barrier resonant tunneling diodes (RTDs) in SiO2 windows patterned on Si(111) substrates. A negative differential resistance (NDR) peak was found at ∼0.2 V at 77 K, and the current density at the NDR peak was estimated to be 6 orders of magnitude higher than that found in earlier reports.