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O: Oberflächenphysik

O 14: Postersitzung (Adsorption an Oberflächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Phasenübergänge, Rastersondentechniken, Struktur und Dynamik reiner Oberflächen)

O 14.36: Poster

Montag, 8. März 2004, 18:00–21:00, Bereich C

Influence of selenium and steps on the Si(111)-(1 × 1):GaSe van der Waals — •Bengt Jaeckel, Rainer Fritsche, Andreas Klein, and Wolfram Jaegermann — Darmstadt University of Technology, Surface Science Division, Department of Materials Science, Petersenstr. 23, 64287 Darmstadt

Evaporation of GaSe onto heated Si(111) surfaces leads to the chemically and electronically passivated Si(111):GaSe surface termination. Before completion of the termination the Si(111) surface passes through several Se-free Si:Ga surface terminations, which require considerable rearrangement of the Si surface atoms. To suppress the intermediate Se-free Si:Ga surface terminations, we have added additional Se during the formation of the surface termination. However, the electronic passivation is less good with additional Se, although the surface shows a clear Si(111)- (1× 1):GaSe structure in LEED and SXPS. UHV-STM studies have been conducted to analyze the details of the surface termination process in dependence on Se vapor pressure. The number and orientation of steps on the Si(111)-surface is strongly modified by additional Se-flux.