Regensburg 2004 – wissenschaftliches Programm

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O: Oberflächenphysik

O 14: Postersitzung (Adsorption an Oberflächen, Epitaxie und Wachstum, Organische Dünnschichten, Oxide und Isolatoren, Phasenübergänge, Rastersondentechniken, Struktur und Dynamik reiner Oberflächen)

O 14.77: Poster

Montag, 8. März 2004, 18:00–21:00, Bereich C

Investigations on nanocrystals in silicondioxide by atomic force microscopy — •E. Beyreuther1, R. Beyer1, K. Walzer1, S. Behrendt1, V. Beyer2, J. von Borany2, J. Weber1, and L. Eng11Technische Universität Dresden, Institut für Angewandte Physik, D-01062 Dresden — 2Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, PF 510119, D-01314 Dresden

Nanocrystals in SiO2 are promising structures for future optoelectronic and memory devices. Optimization of the synthesis process needs detailed information about structure and morphology.

Within the present work SiO2 layers of 100 nm thickness were thermally grown on Si(100). Subsequently Si or Ge nanocrystals were fabricated within those oxide films by ion implantation and rapid thermal annealing. Etching in buffered HF-solution with a low rate of 12nm/min removed the top oxide layer and uncovered the nanocrystals to a certain depth. The surfaces of several samples, which had undergone varied implantation and annealing conditions as well as different etching times were imaged by tapping-mode AFM down to scan sizes of 200x200 µm2. The apparent nanocrystal size and density were found to be dependent on the synthesis parameters and the position within the oxide layer.

In comparison to TEM investigations of the same structures we discuss critically the determination of the cluster size.

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