Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 11: Anorganische dielektrische Schichten

DS 11.2: Vortrag

Samstag, 5. März 2005, 14:45–15:00, TU HS110

The initial interaction of Pr2O3 to (001) and (111) oriented Si substrates — •Dieter Schmeißer — Angewandte Physik-Sensorik, BTU Cottbus, Postfach 10 13 44, D-03013 Cottbus, Germany

The high surface sensitivity of synchrotron based core level spectroscopy is employed to study the initial growth of Pr2O3 on Si(001) and Si(111) substrates. The Si2p core levels are different for the two substrates when the exposure is below 1nm. The core level shifts indicate a single bonding of the oxide on the terminal Si atom in Si(111) while on Si(001) the two dangling bonds are reactive. On both surfaces a significant broadening in the substrate emission is found and interpreted in terms of non bonding Si atoms located at the interface. Upon increasing the Pr2O3 exposure above 1nm the Si back bonds in the first Si layer are attacked to form Si - O - Pr bonds which cause a silicate like core level shift.