Berlin 2005 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 11: Anorganische dielektrische Schichten
DS 11.5: Vortrag
Samstag, 5. März 2005, 15:30–15:45, TU HS110
Preparation of microcrystalline Si thin films by pulsed plasma CVD at normal pressures — •Maki Suemitsu1, Hirotatsu Kitabatake1, Yasutake Toyoshima2, Setsuo Nakajima3, and Tsuyoshi Uehara3 — 1CIR, Tohoku University, Sendai 980-8578 — 2ETRI, AIST, Tsukuba 305-8568 — 3Sekisui Chemicals Co. Ltd., Wadai, Tsukuba 300-4292
By employing a pulsed discharge, microcrystalline Si films have been successfully prepared by plasma-enhanced chmical vapor deposition (PECVD) operated under near-atmospheric pressures. A gas mixture of only monosilane and hydrogen was used without any further diluent gases. Under the operating pressure of 500 Torr and the substrate temperature of 180C, a Si film with dominant crystalline phase is prepared at a deposition rate of 2.0 nm/s. The thickness and the Raman ratio (crystal/amorphous) of the deposited film showed variation along the gas flow direction, both of which are well explained by assuming delayed production and consumption of silyl radicals along the flow direction. In normal-pressure PECVDs, "flow" can be a feasible, additional degree of freedom in analyzing the growth mechanism of microcrystalline thin films.