Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 15: Elektronentheorie
HL 15.3: Vortrag
Freitag, 4. März 2005, 15:30–15:45, TU P-N226
kp parameters of wurtzite GaN — •Sviatoslav Shokhovets1, Gerhard Gobsch1, and Oliver Ambacher2 — 1Institute of Physics, TU Ilmenau, PF 100565, 98684 Ilmenau — 2Center for Micro- and Nanotechnologies, TU Ilmenau, PF 100565, 98684 Ilmenau
Using a so-called A-set of parameters describing the six highest valence bands (VBs) and an assumption of a nonparabolic conduction band (CB) we calculated the imaginary part of the dielectric function in the vicinity of the fundamental absorption edge of wurtzite GaN. Both interband optical transitions and excitonic effects were included. Comparison to experiment yields the momentum matrix element, the electron effective mass, the size of the CB nonparabolicity, and parameter F related to the influence of remote bands. We estimate effects on the values determined owing to discrepancies between the reported A-sets of VB parameters, as well as optical anisotropy and possible anisotropy of the electron effective mass and present a set of self-consistent kp parameters which provides a parameterisation of the band structure of wurtzite GaN in the framework of an 8x8 Hamiltonian.