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HL: Halbleiterphysik
HL 16: Poster Ia
HL 16.7: Poster
Friday, March 4, 2005, 16:30–19:00, Poster TU E
Towards Capture of Optically Induced Spin-Currents in Semiconductor Nanostructures — •Sangam Chatterjee1, Wolfgang Rühle1, and Klaus Köhler2 — 1Department of Physics and Material Science Center, Philipps-University Marburg, Renthof 5, 35032 Marburg, Germany — 2Fraunhofer Institute for Applied Solid-State Physics, 79108 Freiburg, Germany
Coherent one and two photon excitation of semiconductors leads to spin-polarized currents due to quantum interference. Pure spin-currents without a net electron current are generated if the correct polarization geometry is chosen. The spin orientation and direction of these currents can be controlled by the relative phase of the two exciting fields [1]. Our goal is to detect these spin currents in an integrated device.
We have designed and grown a semiconductor nanostructure to demonstrate the capture of ballistic electrons in two different GaAs quantum wells. Experimental photoluminescence studies for different excitation and polarization geometries are presented and discussed.
[1] J. Hübner, W.W. Rühle et al., Phys. Rev. Lett. 90, 216601 (2003) and M. Stevens, A. Smirl et al., Phys. Rev. Lett. 90, 136603 (2003)