Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 16: Poster Ia
HL 16.8: Poster
Freitag, 4. März 2005, 16:30–19:00, Poster TU E
Steps towards the realization of ZnMnSe-InGaAs/GaAs SQW electrical spin injection LEDs — •M. Hetterich1, J. Kvietkova1, T. Passow1, J. Lupaca-Schomber1, B. Daniel1, C. Klingshirn1, W. Löffler1, D. Tröndle1, H. Kalt1, D. Litvinov2, and D. Gerthsen2 — 1Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe, Germany — 2Laboratorium für Elektronenmikroskopie and CFN, Universität Karlsruhe, D-76128 Karlsruhe, Germany
Recently, techniques to spin-polarize electrons and inject them into semiconductor structures have attracted large attention as one of the key elements for a future spin-based (opto-) electronics. In the devices we want to study, semimagnetic ZnMnSe is used as a spin aligner and the spin-polarized electrons are injected into an InGaAs/GaAs quantum well (QW) LED. As the first step towards this aim we have fabricated surface-emitting InGaAs/GaAs QW p-i-n diodes using MBE and optical lithography. Bright electroluminescence (EL) could be obtained from these LEDs in the whole temperature range from 5-300 K. We have therefore moved on to add the n-doped ZnMnSe:Cl spin aligner, which is grown in a different system. A thin As layer is used to protect the sample from oxidation during transport to the II-VI chamber. This protective layer can easily be desorbed thermally, before the ZnMnSe growth is initiated. Indeed, TEM investigations prove the III-V/II-VI interface to be of good quality. Bright EL of these spin LEDs could already be obtained for T=5-300 K. Polarization-resolved magneto-EL measurements to determine the spin injection efficiency are currently under way.