Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 17: Poster Ib
HL 17.10: Poster
Freitag, 4. März 2005, 16:30–19:00, Poster TU F
Room-temperature cathodoluminescence of n-type ZnO thin films grown by PLD in N2, N2O, and O2 background gas. — •M. Lorenz1, H. Hochmuth1, T. Nobis1, J. Lenzner1, G. Zimmermann1, M. Diaconu1, H. Schmidt1, H. von Wenckstern1, A. Schön2, D. Schenk2, and M. Grundmann1 — 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, 04103 Leipzig, Germany — 2El-Mul Technologies Ltd., Soreq, Yavne 81104, Israel
Epitaxial ZnO thin films were grown by pulsed laser deposition (PLD) in N2, or N2O, or O2 background gas on MgO buffered a-plane sapphire substrates. The excitonic room temperature cathodoluminescence (CL) intensity, the carrier concentration and the Hall mobility show well defined maxima for films grown at PLD gas pressures of ca. 1 mbar N2, N2O, and O2. However, despite the comparable high CL intensities of the ZnO films grown in the three different background gases, their surface roughness varied considerably. Films with rough surface show a broadening and splitting of the room temperature CL peak into maxima at 3.21 and 3.26 eV which could be due to either grain morphology or spatial variation of the electronic defect structure. Large-area PLD ZnO thin films were used to demonstrate scintillator device applications. Work supported partially (HS, MD) by the BMBF, FKZ 03N8708.