Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 17: Poster Ib
HL 17.56: Poster
Freitag, 4. März 2005, 16:30–19:00, Poster TU F
Ultrahigh vacuum direct bonding of III-V semiconductors at room temperature after cleaning with hydrogen ion — •Nasser Razek1, Axel Schindler1, Volker Gottschalch2, and Bernd Rauschbach1 — 1Leibniz-Institut für Oberflächenmodifizierung e. V., Permoserstr. 15, D-04318 Leipzig, Germany — 2Unversität Leipzig, linnestr.3 04103 Leizig, Germany
Direct wafer bonding of GaAs were carried out in an ultrahigh vacuum. The wafer surfaces GaAs were cleaned by bombardment of low energy a mass separated hydrogen of ions 300 eV with current density ∼ 4.5 µ A/cm2 at temperature 150 ∘C. After cleaning at room temperature, the wafers were connected face to face. At contact, the interface formed spontaneously over the whole wafer area without any application of mechanical pressure. Then, the bonded wafers were annealed in UHV or at low temperature <200 ∘C to improve the bonding at the interface over the large wafer areas. The samples interface has been investigated by infrared transmission pictures and cross-sectional transmission electron microscopy. The electrical characteristic of the bond interface has been investigated by current-voltage (I-V) measurement.