Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 17: Poster Ib
HL 17.63: Poster
Freitag, 4. März 2005, 16:30–19:00, Poster TU F
Structural and magnetic properties of Co-implanted ZnO films — •Numan Akdogan1, Alexei Nefedov1, Hartmut Zabel1, and Hans-Werner Becker2 — 1Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany — 2Ionenstrahlenphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany
The recently discovered class of ZnO-based dilute magnetic semiconductors (DMSs), which can be formed by doping 3d transition metal atoms in ZnO, offers an interesting combination of electrical, optical, and magnetic properties. Of special interest is the possibility to join aspects of semiconductor and magnetic effects to develop new device concepts. Furthermore, the band gap in ZnO is large enough (3.3 eV) to allow operation of such devices at room temperature. Moreover, according to suggestion of Dietl [1], the ZnO-based DMSs can order ferromagnetically at room temperature. In this contribution we report on structural and magnetic properties of Co-implanted ZnO films. ZnO films were epitaxially grown sapphire substrates via rf-sputtering. Subsequentially the films were doped with Co-ions via ion implantation. The structural characterization was carried out using synchrotron radiation at the HASYLAB and the DELTA (Dortmund). The magnetic properties were investigated using x-ray resonant magnetic scattering (XRMS) at BESSY as well as MOKE and SQUID magnetometry. This work is supported by BMBF through the project 03ZAE8BO. N.A. acknowledges a fellowship through the International MPI Research School No-dqSurMatNo-dq.
1. T. Dietl et al, Science 287, 1019 (2000).