Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 17: Poster Ib
HL 17.67: Poster
Freitag, 4. März 2005, 16:30–19:00, Poster TU F
In-plane gate transistors realized by writing with focused-ion-beam implantation — •Mihai Draghici, Dorina Diaconescu, Dirk Reuter, and Andreas D. Wieck — Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum
The focused-ion-beam (FIB) technique was used in past to directly write in-plane gate transistors [1]. Insulating regions are written by FIB implantation on GaAs/AlxGa1−xAs - heterostructure samples in order to define a narrow conducting channel and to electrically separate the gate electrode from the channel.
We present a new method where the conducting channel is defined by doping with FIB implantation (positive writing mode). Using a p-type GaAs/AlxGa1−xAs - heterostructure as base material, n-type conducting regions are realized by overcompensation doping with Si ions. This technique involves an additionally technological step, thermal annealing in order to activate the dopants but offers the possibility to integrate n- and p-conducting channels on the same wafer (similar to CMOS technique).
We discuss the dependence of electrical properties of the n- and p-type transistors on the channel dimensions and implantation doses.
[1] A. D. Wieck and K. Ploog, Appl. Phys. Lett. 56, 928 (1990).