Berlin 2005 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 2: Symposium ZnO - Rediscovered
HL 2.5: Vortrag
Freitag, 4. März 2005, 12:45–13:15, TU P270
Transition metal ions in ZnO a challenge for spintronic applications — •Axel Hoffmann1, Enno Malguth1, Martin Strassburg2, Mathew H. Kane2, and Ian T. Ferguson2 — 1Institut für Festkörperphysik, Technische Universität Berlin, D - 10623 Berlin, Germany. — 2Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, U.S.A.
Increased efforts on transition metal (TM) doped wide bandgap materials, such as ZnO and GaN, were triggered by theoretical predictions suggesting ferromagnetism of diluted magnetic semiconductors with Curie temperatures above room temperature. Experimental results have demonstrated room temperature ferromagnetism in these systems, though many growth techniques used to date for this system are not ideal for device applications. Non-equilibrium growth methods, such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOCVD), have been applied to achieve high carrier and dopant concentrations. This paper reports on optical and magneto-optical properties of TM doped ZnO and on the state of the art of ferromagnetism in ZnO.