Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 21: Spintronik III
HL 21.8: Vortrag
Samstag, 5. März 2005, 12:30–12:45, TU P164
Anisotropy Analysis of GaMnAs on GaAs (001) and (311)A by Magnetotransport and Ferromagnetic Resonance — •Matthias Reinwald1, Ursula Wurstbauer1, Matthias Döppe1, Christoph Bihler2, Hans Huebl2, Sebastian Gönnenwein3, Martin Brandt2, Dieter Weiss1, and Werner Wegscheider1 — 1Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany — 2Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany — 3Kavli Institute of Nanoscience Delft, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ DELFT, The Netherlands
Ga(1−x)MnxAs layers with manganese content x of about 2% have been grown by molecular beam epitaxy on GaAs (001) and (311)A substrates. Magnetotransport measurements with in-plane magnetic field show planar Hall effect, so that it is possible to study the angular dependence of the switching fields by rotating the sample in the field. In (001) samples, a correlation between these switching fields and the magnetic anisotropy with the easy axis parallel to the surface is observed. (311) oriented samples show a more complicated behaviour of the magnetic anisotropy, which is confirmed by ferromagnetic resonance experiments. The hard axis correlated with a strong uniaxial magnetic anisotropy along growth direction in case of the (001) samples is tilted out of the growth direction for the (311) samples, leading to a different behaviour of the planar Hall effect.
This work is supported by BMBF Verbundprojekt Spinelektronik und Spinoptoelektronik in Halbleitern