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HL: Halbleiterphysik

HL 23: II-VI Halbleiter II

HL 23.2: Talk

Saturday, March 5, 2005, 11:00–11:15, TU P-N202

Electrical characterization of ZnO using Schottky contacts — •Holger von Wenckstern, Swen Weinhold, Rainer Pickenhain, Gisela Biehne, Holger Hochmuth, Michael Lorenz, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig

We have investigated electron traps in ZnO thin films using admittance and deep level transient spectroscopy. The c-oriented ZnO thin films are grown epitaxially on a-plane sapphire by pulsed laser deposition. The Schottky contacts are realized by thermal evaporation of Ag or Pd. The ohmic contacts are realized by an eutectic mixture of indium and germanium. The properties of the contacts were investigated by current- voltage and capacitance-voltage measurement. For that, the diodes were investigated in a temperature range from 10 K to 330 K.

Thermal admittance spectroscopy was carried out between 10 and 330 K. Deep level transient spectroscopy (DLTS) was done in two different setups. In one of them the diodes were investigated between 10 and 300 K. The other allows investigations between 80 and about 500 K. Up to now we have identified by DLTS defects lying about 290 meV or 710 meV below the conduction band minimum, respectively.