Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 23: II-VI Halbleiter II
HL 23.4: Talk
Saturday, March 5, 2005, 11:30–11:45, TU P-N202
Morphology and electronic structure of MOMBE grown ZnO surfaces — •Stefan Andres, Tilo Plake, and Christian Pettenkofer — Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin
ZnO is deposited by metal organic molecular beam epitaxy (MOMBE) in an ultrahigh vacuum (UHV) system on various substrates such as Si(111), Al2O3, ZnO(1010) and glass at temperatures between 200∘C and 500∘C. Films are investigated in-situ by low energy electron diffraction (LEED), photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). For deposition with the precursor system diethylzinc/water significantly lower OH admixtures were found in the O1s region by monochromated x-ray photoelectron spectroscopy (MXPS) in comparison to magnetron sputtered films. The surface electronic structure is investigated by angle resolved PES (ARPES) with respect to the admixture of hydrogen during film growth and subsequent annealing of the films. Thus the hydrogen incorporation into the film and the termination of the surface can be determined. For ZnO films on Al2O3 the electrical properties (doping and resistivity) are determined ex-situ and compared to the data obtained from the valence band spectra.