Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 24: Bauelemente
HL 24.3: Vortrag
Samstag, 5. März 2005, 11:15–11:30, TU P-N229
Fabrication and characterization of a vertical resonant tunneling diode in the sub-100nm range — •Jakob Wensorra1, Mihail Ion Lepsa1, Klaus Michael Indlekofer1, Arno Förster2, and Hans Lüth1 — 1Institut für Schichten and Grenzflächen (ISG1) und Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich — 2Fachhochschule Aachen, Abteilung Jülich, Physikalische Technik, Ginsterweg 1, 52428 Jülich
With the help of electron beam lithography and using high resolution Hydrogen Silsesquioxan (HSQ) as mask material, vertical GaAs/AlAs resonant tunneling diodes (RTD) with lateral dimensions down to 50nm have been realized. For contacting the nanostructures, a novel non-alloyed ohmic contact on a very thin low-temperature-grown GaAs (LT-GaAs) top layer has been developed. By means of DC electrical measurements, the dependence of the I-V characteristics on the device dimension has been analyzed. Here, the electronic transport properties are strongly influenced by the lateral depletion region, which defines the vertical conductive channel within the device. In the I-V characteristics, a clearly pronounced region of negative differential conductance has been observed at room temperature, down to 50nm lateral dimensions.