Berlin 2005 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 31: GaN: Bauelemente
HL 31.6: Vortrag
Samstag, 5. März 2005, 16:15–16:30, TU P-N201
Dynamic properties of blue (Al,In)GaN laser diodes — •Ulrich T. Schwarz1, Markus Pindl1, Michael Furitsch2, Andreas Leber2, Andreas Miler2, Alfred Lell2, and Volker Härle2 — 1Institut für Angewandte und Experimentelle Physik, Universitätsstr. 31, 93053 Regensburg, Germany — 2OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany
While remarkable progress is being reported on blue laser diode lifetime and output power, information on dynamic properties of those laser diodes are rare. For most applications a kink-free operation up to several ten milliwatt optical output power is as critical as is the quality of the far-field intensity distribution. For direct modulation, i.e. pulsed operation, carrier dynamics and thermal budget will critically influence stability of the optical output power and beam pointing stability. We demonstrate how to measure simultaneously the temporal evolution of near-field and far-field of blue laser diodes. From this information we extract the phase dynamics that causes beam steering. The importance of the carrier dynamics for beam instabilities is expressed in the relatively high value of the antiguiding factor of InGaN quantum wells, which was predicted in simulations including many-body effects and which was measured by means of the Hakki-Paoli method of gain spectroscopy.