Berlin 2005 – scientific programme
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HL: Halbleiterphysik
HL 43: GaN: Pr
äparation und Charakterisierung II
HL 43.2: Talk
Monday, March 7, 2005, 15:15–15:30, TU P164
Optical and magnetic properties of rare earth implanted AlN — •Gregor Öhl1, U. Vetter1,2, and H. Hofsäss1 — 1Georg-August-Universität, II. Physikalisches Institut, Friedrich-Hund-Platz 1, 37077 Göttingen — 2Philipps-Universität, AG Oberflächenphysik, Renthof 5, 35032 Marburg
Rare earths (RE) in AlN already have been studied extensively. Nevertheless, as shown in recent studies e.g. on the system AlN:Gd [U. Vetter, Appl. Phys. Lett. 83,11 and Gruber, Vetter et al., Phys. Rev. B 69], where single systems with moderate Lanthanide doses implanted were investigated - RE in AlN show very promising features, e.g. for the use as electroluminescent emitters.
In this study we investigated single (at high doses) and double systems of RE in AlN thin films grown on SiC. The RE were implanted at different energies and fluences giving a square implantation profile. The implantation process was optimised, as was the post-implantation annealing procedure. RBS analysis was performed to monitor the annealing behaviour of the implantation profile, while possible clustering of the metal ions was monitored by XRD measurements. Optical properties were investigated by means of temperature dependent time-resolved cathodoluminescence studies, life-time and energy-transfer studies were performed on selected radiative intra-4f electron transitions of the implanted lanthanide ions. In addition, magnetic properties of the RE implanted AlN will be discussed.