Berlin 2005 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 58: Poster IIb

HL 58.49: Poster

Dienstag, 8. März 2005, 16:30–19:00, Poster TU F

InP-based III-V solar cells — •H.-J. Schimper, Z. Kollonitsch, K. Möller, U. Seidel, U. Bloeck, K. Schwarzburg, F. Willig, and T. Hannappel — Hahn-Meitner-Institute, Glienicker Str. 100, 14109 Berlin, Germany

New materials were introduced for multi junction solar cells based on the lattice constant of InP, in particular GaAsSb (Egap = 0.75eV) and InAlGaAs (Egap = 1.15eV). These materials were grown via metalorganic vapor phase epitaxy (MOVPE) using the alternative precursors TBP and TESb.

The new absorber materials were compared with the more established materials InGaAs (Egap = 0.75eV) and InGaAsP (Egap = 1.15eV). The values of short-circuit current and open-circuit voltage achieved with the new GaAsSb pn-solar cells were in the same range as the best InGaAs pn-cells. The substitution of Ga by Al in InAlGaAs leads to III-V-compounds lattice matched to InP(100) with band gaps between 0.75eV < Egap < 1.5eV. A pn-junction solar cell was prepared from In0.53Al0.26Ga0.21As with Egap = 1.15eV and compared to the InGaAsP (Egap = 1.15eV) cell. It will be shown that the latter cell with 26% Al reached an internal quantum efficiency close to that of the InGaAsP cell.

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