Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 20: Organische Dünnschichten II
O 20.4: Vortrag
Samstag, 5. März 2005, 11:30–11:45, TU EB202
Submicron chemical patterning of silicon substrates by laser direct writing: A simple photothermochemical model — •Nils Hartmann, Thorsten Balgar, Steffen Franzka, and Eckart Hasselbrink — Universität Duisburg-Essen, Campus Essen, Fachbereich Chemie, Universitätsstr. 5, 45141 Essen
Recently laser direct writing has been shown to provide a versatile means for the preparation of laterally structured alkylsiloxane monolayers on silicon substrates [1,2]. Respective procedures either are based on the preparation of suitable templates or on direct patterning of coated substrates. A common feature of all these procedures is the capability to create patterns with lateral dimensions which are significantly below the diffraction-limited laser spot diameter. At a 1/e2 laser spot diameter of 2.5 microns, for example, well-confined lines with a width down to 120 nanometers have been prepared. Here we present a simple model, which considers the laser-assisted local annealing of the substrate and the strongly temperature dependent kinetics of the initiated chemical processes. The model allows to reproduce the experimentally observed dependence of the line width on the incident laser power and the writing speed and provides a simple explanation for the unexpectedly high resolution capability of the patterning technique.
[1] Th. Balgar, S. Franzka, N. Hartmann and E. Hasselbrink, Langmuir 2004, 20, 3525.
[2] N. Hartmann, Th. Balgar, R. Bautista, D. Dahlhaus, S. Franzka and E. Hasselbrink, Proc. SPIE 2003, 5223, 9.