Berlin 2005 – wissenschaftliches Programm
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O: Oberflächenphysik
O 38: Halbleiteroberfl
ächen und -grenzfl
ächen
O 38.8: Vortrag
Dienstag, 8. März 2005, 12:30–12:45, TU EB301
Investigation of the geometrical properties of NiMnSb-Half-Heusler thin films. — •Andreas Stahl1, Christian Kumpf1, Eberhard Umbach1, Peter Bach2, Georg Schmidt2, and Laurens Molenkamp2 — 1Experimentelle Physik II, Univ. Würzburg — 2Experimentelle Physik III, Univ. Würzburg
The Half-Heusler alloy NiMnSb is an interesting material which may be used in spintronic devices due to its unusual half-metallic properties. It can be grown in high crystalline quality on InGaAs/InP substrates, however as for all heteroepitaxial systems, mechanical stress is an important issue which influences crystalline quality, film growth, and magnetic properties. One example is a magnetic anisotropy which depends on the thickness of the Half-Heusler layer [1].
We present a series of x-ray measurements on MBE-grown NiMnSb thin films from 15 to 120nm thickness. Reciprocal space mapping was performed using the six-circle-diffractometer at BW2, HASYLAB, Hamburg. Structural properties like the critical thickness for pseudomorphic growth, relaxation, and the poisson ratio of the Half-Heusler layers are discussed.
[1] A. Koveshnikov et al.: submitted to J. Appl. Phys. (2004).