Berlin 2005 –
wissenschaftliches Programm
O 38: Halbleiteroberfl
ächen und -grenzfl
ächen
Dienstag, 8. März 2005, 10:45–13:00, TU EB301
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10:45 |
O 38.1 |
Atomic structure of the GaAs(001)-c(4×4) surface: first-principles evidence for diversity of heterodimer motifs — •E. Penev, P. Kratzer, and M. Scheffler
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11:00 |
O 38.2 |
InP growth on c(4×4) and (1×3) reconstructed GaAsSb(100) surfaces — •Z. Kollonitsch, U. Seidel, S. Neumann, F.-J. Tegude, F. Willig, and T. Hannappel
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11:15 |
O 38.3 |
A study on the surface structure of CuInSe2 (001) — •thalia Deniozou, Norbert Esser, Thomas Schulmeyer, and Ralf Hunger
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11:30 |
O 38.4 |
Electronic structure of Ge(001) surface studied by room temperature scanning tunneling spectroscopy — •Oguzhan Gurlu, Harold J.W. Zandvliet, and Bene Poelsema
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11:45 |
O 38.5 |
Photoelektronenbeugungsuntersuchungen an der SiO2/4H-SiC(0001)-Grenzfläche — •Mark Schürmann, Stefan Dreiner, Ulf Berges, Daniel Weier, Abner de Siervo und Carsten Westphal
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12:00 |
O 38.6 |
Diffusion Pathways of Hydrogen across the Steps of a vicinal Si(001)-Surface — •P. Kratzer, M. Lawrenz, C. Schwalb, M. Dürr, and U. Höfer
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12:15 |
O 38.7 |
Untersuchung der Struktur der SiO2/Si-Grenzschicht in Abhängigkeit von der Oberflächenorientierung — •Stefan Dreiner, Mark Schürmann, Ulf Berges, Martin Krause, Christian Flüchter und Carsten Westphal
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12:30 |
O 38.8 |
Investigation of the geometrical properties of NiMnSb-Half-Heusler thin films. — •Andreas Stahl, Christian Kumpf, Eberhard Umbach, Peter Bach, Georg Schmidt, and Laurens Molenkamp
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12:45 |
O 38.9 |
Characterization of the growth peculiarities of Physical Vapor Deposited CdS on Cu(In,Ga)Se2 Thin Film Solar Cells Using Kelvin Probe Force Microscopy in Ultrahigh Vacuum — •Ferdinand Streicher, Marin Rusu, Christian A. Kaufmann, Axel Neisser, Susanne Siebentritt, Martha Ch. Lux-Steiner, and Thilo Glatzel
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