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Berlin 2005 – scientific programme

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O: Oberflächenphysik

O 49: Epitaxie und Wachstum II

Tuesday, March 8, 2005, 15:45–18:30, TU EB407

15:45 O 49.1 In-situ STM Measurements during MOVPE — •M. Breusing, B. Rähmer, M. Pristovsek, R. Kremzow, and W. Richter
16:00 O 49.2 Modelling of ultrathin SixGe1−x film growth on Si(111) by chemical vapour deposition — •Selvi Gopalakrishnan, H. Rauscher, and R.J. Behm
16:15 O 49.3 Thin CuInS2 films prepared by MOMBE: Interface and surface properties — •Carsten Lehmann, Christian Pettenkofer, and Wolfram Calvet
16:30 O 49.4 Facet and layer formation of II-VI semiconductors on GaSe van der Waals terminated Si(111) — •Bengt Jaeckel, Rainer Fritsche, Andreas Klein, and Wolfram Jaegermann
16:45 O 49.5 Real-time study of orientational transitions during organic thin film growth — •Stefan Kowarik, Alexander Gerlach, Stefan Sellner, Frank Schreiber, Leide Cavalcanti, and Oleg Konovalov
17:00 O 49.6 Mechanisms of grain growth, coarsening and texture formation in Ag-films on an amorphous Substrate — •Celia Polop, Christian Rosiepen, Enrique Rodriguez-Cañas, and Thomas Michely
17:15 O 49.7 Fe on GaN: Growth investigations — •Ralph Meijers, Raffaella Calarco, Hans Lüth, Matthias Buchmeier, and Daniel Bürgler
17:30 O 49.8 Growth of NiO on Ag(100) Studied by In-Situ X-Ray Scattering — •E. Schierle, E. Weschke, A. Gottberg, and S.R. Krishnakumar
17:45 O 49.9 Growth and atomic structure of NiO and MnO films on Pt(111): In-situ STM experiments at elevated temperatures — •Christian Hagendorf, Henning Neddermeyer, and Wolf Widdra
18:00 O 49.10 Bestimmung des Koinzidenzgitters eines Aluminiumoxidfilms auf Ni3Al(111) — •Stefan Degen, Aleksander Krupski, Marko Kralj, Andreas Langner, Conrad Becker, Moritz Sokolowski und Klaus Wandelt
18:15 O 49.11 Formation, propagation and stability of stacking fault defects in Iridium thin films — •Sebastian Bleikamp, Celia Polop, Arne Thoma, Gerhard Pirug, and Thomas Michely
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