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DS: Dünne Schichten
DS 20: Ion beam induced nanostructures
DS 20.3: Talk
Thursday, March 30, 2006, 15:00–15:15, GER 37
Formation of nanopatterns induced by low-energy ion sputtering of Si surfaces — •Frank Rotter1, Kun Zhang1, Carsten Ronning1, Hans Hofsäss1, Michael Uhrmacher1, and Johann Krauser2 — 1II. Physikalisches Institut and SFB 602, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 2Fachbereich Automatisierung und Informatik, Hochschule Harz, Friedrichstraße 57-59, D-38855 Wernigerode
Sputter erosion of Si generates nanoscale ripple patterns which are stable at ambient conditions and which may serve as experimental test of ripple formation theories. This ion-beam induced surface morphology evolution is the result of a balance between ion beam erosion roughening and soothing surface diffusion processes. The evolution of Si surfaces has been investigated using atomic force microscopy after low-energy (≤ 50 keV) Xe+ ion irradiation at room temperature with ion-fluences up to 1 · 1017 ions/cm2. Different effects have been observed as a function of the incidence angle of the ion beam: mount-like roughening occurs near normal direction (θ ≤ 45∘); whereas, ripple formation takes place for θ ≥ 60∘ with the wave-vector parallel or perpendicular to ion-beam direction, depending on the incidence angle and the ion-fluences. Furthermore it is found that the orientation of the induced ripple pattern switches from perpendicular to parallel with increasing the ion-fluence at glance incidence angle (θ ≥ 80∘).