Dresden 2006 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 9: Functional thin films II
DS 9.1: Vortrag
Dienstag, 28. März 2006, 11:15–11:30, GER 37
Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: XAS and EELS Study — •P. Hoffmann1, D. Schmeißer1, F. Himpsel2, H.-J. Engelmann3, E. Zschech3, H. Stegmann4, and J.D. Denlinger5 — 1LS Angewandte Physik, BTU Cottbus, Conrad-Wachsmann-Allee 17, 03046 Cottbus — 2University of Wisconsin / Madison (USA) — 3AMD Saxony LLC & Co KG, Dresden (Germany) — 4Carl Zeiss NTS GmbH, Oberkochen (Germany) — 5ALS Berkley / California (USA)
The use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. In CVD deposited organo-silicate glass (OSG) the substitution of oxygen in SiO2 by methyl groups (-CH3) reduces the permittivity significantly (from 4.0 in SiO2 to 2.6-3.3 in the OSG). However, plasma processing removes C and H containing molecular groups. Therefore, compositional analysis and chemical bonding characterization of structured films with nanometer resolution is necessary. OSG thin films as-deposited and after plasma treatment are studied using XAS and EELS. In both techniques, the fine structure near the C1s edge allows to identify C-H, C-C, and C-O bonds. XAS spectra have been recorded for non-patterned films and EELS spectra for patterned structures. The chemical bonding is compared for as-deposited and plasma-treated low-k materials. The fluorescence and the electron yield recorded while XAS measurement are compared. Examination of the C 1s near-edge structures reveal a modified bonding of the remaining C atoms in the plasma-treated sample regions.