Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 23: Interfaces/surfaces
HL 23.5: Vortrag
Dienstag, 28. März 2006, 18:15–18:30, BEY 154
The Role of Hydrogen in the Pre-epitaxial Cleaning of Silicon(100)-Surfaces — •Markus Schindler1, Matthias Schmidt1, Dorota Kułaga-Egger1, Tanja Stimpel-Lindner1, Jörg Schulze1, Ignaz Eisele1, and William Taylor2 — 1Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg — 2Freescale Inc., Austin TX, USA
Due to the continous trend to smaller device dimensions in silicon microelectronics dopant diffusion and hence process temperature must be limited. In this work we investigate the minimum thermal budget to achieve contamination-free silicon surfaces prior to expitaxy in a commercial low pressure chemical vapour deposition (LPCVD)-system. Process parameters varied are temperature and oxygen partial pressure (steady-state-boundary). The samples are characterized with secondary-ion-mass-spectroscopy (SIMS) for oxygen- and carbon impurities. The presence of hydrogen in the growth enviroment leads to less stringent requirements for oxygen partial pressure and a complete removal of carbon impurities. For oxygen removal cleaning in inert gas ambient behaves similar to ultra-high-vacuum (UHV). The same reaction path seems to be valid for silicon substrate cleaning under hydrogen, argon and UHV conditions. We conclude that for low-temperature preepitaxial cleaning the oxygen partial pressure has to be lowered considerably in future LPCVD-systems.