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HL: Halbleiterphysik

HL 23: Interfaces/surfaces

HL 23.6: Talk

Tuesday, March 28, 2006, 18:30–18:45, BEY 154

Structural and electronic properties of Si/SiOxNy interfaces — •Alberto Martinez-Limia, Rebecca Janisch, Philipp Plänitz, and Christian Radehaus — Institute for Electrical and Information Egineering, TU Chemnitz, 09112 Chemnitz, Germany

The incorporation of N into the gate oxide of metal-oxide-semiconductor devices is an extended practice in the present microelectronic technology. Improvements in the dielectric properties and suppression of dopant diffusion and material defects have been reported for this kind of materials.

To study structural an electronic properties of Si/SiOxNy interfaces we performed DFT calculations with CPMD and ABINIT codes. We generated several Si/SiOxNy model interfaces for low N concentrations. After structural optimization, the site projected density of states (DOS) was calculated for representative atoms of the system. With this information and using GW band gap results for the bulk phase of SiOxNy and Si we can evaluate valence and conduction band offsets of these systems. Changes of the DOS at the interface depending on concentration and position of the N atoms on the SiOxNy phase are discussed.