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HL: Halbleiterphysik

HL 48: Preparation and characterization

HL 48.1: Talk

Thursday, March 30, 2006, 15:15–15:30, POT 151

Silicon Nanowire Surround-Gate Field-Effect Transistor — •Volker Schmidt¹, Heike Riel², Stephan Senz¹, Siegfried Karg², Walter Riess², and Ulrich Goesele¹ — ¹Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle Germany — ²IBM Zurich Research Laboratory, Saeumerstrasse 4, 8803 Rueschlikon, Switzerland

A generic process for fabricating a vertical surround-gate field-effect transistor based on epitaxially grown nanowires is presented. Exemplarily, we used Si nanowires and show a first electrical characterization proving the feasibility of the process developed and the basic functionality of this device.